Robertson J, Powell MJ: Gap states in silicon nitride. Appl Phys Lett 1984, 44:415.CrossRef 56. Ko C, Joo J, Han M, Park BY, Sok JH, Park K: Annealing effects on the photoluminescence Foretinib solubility dmso of amorphous silicon nitride films. J Korean Phys Soc 2006, 48:1277. 57. Boulitrop F, Dunstan DJ: Phonon interactions in the tail states of a-Si:H. Phys Rev B 1983, 28:5923.CrossRef 58. Proot JP, Delerue C, Allan G: Electronic structure and optical properties of silicon crystallites: Selleck PF-6463922 application to porous silicon. Appl Phys Lett 1948, 1993:61. 59. Takagi H, Ogawa H, Yamazaki Y, Ishizaki A, Nakagiri T: Quantum size

effects on photoluminescence in ultrafine Si particles. Appl Phys Lett 1990, 56:2379.CrossRef 60. Ledoux G, Gong J, Huisken F, Guillois O, Reynaud C: Photoluminescence of size-separated silicon nanocrystals: confirmation of quantum confinement. Appl Phys Lett 2002, 80:4834.CrossRef 61. Garrido B, López M, Pérez-Rodríguez A, García C, Pellegrino P, Ferré R, Moreno BIBW2992 in vivo J, Morante J, Bonafos C, Carrada M: Optical and

electrical properties of Si-nanocrystals ion beam synthesized in SiO2. Nucl Instr and Meth in Phys Res B 2004, 216:213.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions OD wrote the article and carried the interpretation of the data. OD produced the samples and characterized them by spectroscopic ellipsometry, FTIR, absorption, PL, and Raman. JP carried out the RBS measurements. XP investigated the structure by HRTEM. SPN produced the multilayers. JC has been involved in the discussion about the origin of the PL. FG proposed and guided the project. All authors Aprepitant read and approved the final manuscript.”
“Background The technical range of nanoscale is 1 to 999 nm, but people often refer to nanosize when an element is smaller than about 100 nm, where quantum effects are dominant instead of classical ones. Nanophysics and nanoelectronics have been rapidly developed thanks to the advancement of relevant technologies such as crystal growth and lithography, which facilitate sophisticated experiments for nanosystems [1, 2]. A recent

conspicuous trend in the community of electronic device is that the integrated circuits and components are miniaturized towards atomic-scale dimensions [2]. We can confirm from many experiments and theories associated with nanoscale elements that the quantum effects become prominent when the transport dimension reaches a critical value which is the Fermi wavelength, while at the same situation, the classical theory for the motion of charges and currents is invalid. Not only quantum dot and quantum wire but also the quantum characteristics of electronic circuits involving nanoscale elements are important as a supporting theory for nanometer electronic technology and quantum information technology. For this reason, quantum effects in electronic circuits with nanoscale elements have been widely studied in recent years.