J Non-Crystalline Solids 2008, 354:2809–2815.CrossRef 10. Albertin KF, Pereyra I: Improved effective charge density in MOS capacitors with PECVD SiO x N y dielectric layer obtained at low RF power. J Non-Crystalline Solids 2008, 354:2646–2651.CrossRef 11. Green ML, Gusev EP, Degraeve R, Garfunkel EL: Ultrathin (<4 nm) SiO 2 and Si–O–N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits. J Appl Phys 2001, 90:2057–2121.CrossRef 12. Pereyra I, Alayo MI: High quality low temperature DPECVD silicon dioxide. J Non-Crys Solids 1997, 212:225–231.CrossRef
13. Kraft R, Schneider TP, Dostalik WW, Hattangady S: Surface nitridation PI3K Inhibitor Library clinical trial of silicon dioxide with a high density nitrogen plasma. J Vac Sci Technol B 1997, 15:967–970.CrossRef 14. Murakawa S, Ishizuka S, Nakanishi T, Suwa T, Teramoto A, Sugawa S, Hattori T, Ohmi T: Depth profile of nitrogen atoms in silicon oxynitride films formed by low-electron-temperature microwave plasma nitridation. Jpn J Appl Phys
2010, 49:091301.CrossRef 15. Perera R, Ikeda A, Hattori R, Kuroki Y: Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively click here coupled nitrogen plasma. Thin Solid Films 2003, 423:212–217.CrossRef 16. Kakiuchi H, Ohmi H, Harada M, Watanabe H, Yasutake K: Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma. Appl Phys Lett 2007, 90:091909.CrossRef 17. Kakiuchi H, Ohmi H, Harada M, Watanabe H, Yasutake K: Significant enhancement of Si oxidation rate at low temperatures
by atmospheric pressure Ar/O 2 plasma. Appl Phys Lett 2007, 90:151904.CrossRef Flucloronide 18. Zhuo Z, Sannomiya Y, Goto K, Yamada T, Ohmi H, Kakiuchi H, Yasutake K: Formation of SiO 2 /Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation. Curr Appl Phys 2012, 12:S57-S62.CrossRef 19. Ohmi T: Total room temperature wet cleaning for Si substrate surface. J Electrochem Soc 1996, 143:2957–2964.CrossRef 20. Taniguchi K, Tanaka M, Hamaguchi C, Imai K: Density relaxation of silicon dioxide on (100) silicon during GW-572016 clinical trial thermal annealing. J Appl Phys 1990, 67:2195–2198.CrossRef 21. Tatsumura K, Watanabe T, Yamasaki D, Shimura T, Umeno M, Ohdomari I: Effects of thermal history on residual order of thermally grown silicon dioxide. Jpn J Appl Phys 2003, 42:7250–7255.CrossRef 22. Gusev EP, Lu HC, Garfunkel EL, Gustafsson T, Green ML: Growth and characterization of ultrathin nitrided silicon oxide films. IBM J Res Dev 1999, 43:265–286.CrossRef 23. Watanabe K, Tatsumi T, Togo M, Mogami T: Dependence of electrical properties on nitrogen profile in ultrathin oxynitride gate dielectrics formed by using oxygen and nitrogen radicals. J Appl Phys 2001, 90:4701–4707.CrossRef Competing interests The authors declare that they have no competing interests.